Speaker
Description
Germanium has emerged as a promising platform for superconductor–semiconductor hybrid devices [1,2] due to its compatibility with existing CMOS technology, high carrier mobility [3], and a relatively strong spin–orbit coupling [4]. A critical requirement for such hybrid systems is the realization of a transparent and well-defined interface between the superconductor and the semiconductor at the nanoscale.
Achieving this is particularly challenging due to the presence of native oxides on the surface, which can act as barriers to efficient charge transport. In our work, we investigate reactive ion etching based on the gases SF6/CHF3 as a method to remove surface oxides and create a clean superconductor-semiconductor interface.
To quantify the interface quality and device performance, we conducted DC measurements at mK temperatures.
With this method, we aim to fabricate reliable superconductor-germanium contacts, enabling further research into germanium-based Josephson junctions.
Publications/References:
[1] Tosato, A. et al, Commun Mater 4, 23 (2023)
[2] Aggarwal K. et al, Phys. Rev. Research 3, L022005 (2021)
[3] Dobbie A. et al, Appl. Phys. Lett. 101, 172108 (2012)
[4] Mizokuchi R. et al, Appl. Phys. Lett. 111, 063102 (2017)
