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Description
We report on the electronic and topological properties of ZrTe₅ flakes synthesized via chemical vapor transport (CVT). Mechanically exfoliated ZrTe₅ flakes with nominal thicknesses ~100 nm are transferred onto pre-fabricated Pt contacts with 1-3-3-1 Hall bar geometries on SiO₂/Si sugbstrates. Using ac phase-locked low-/high-magnetotransport measurements, a distinct longitudinal resistance peak at 150 K is observed, signaling a Lifshitz transition and a subsequent crossover from hole- to electron-dominated charge carrier transport. Analysis of Shubnikov-de Haas (SdH) oscillations and observation of an anomalous Hall effect yields a non-trivial Berry phase $(\phi_{B}=\pi)$, indicating the presence of topological surface states. Angle-resolved magnetotransport measurements reveal the emergence of a pronounced planar Hall effect around the transition temperature. These results characterize ZrTe₅ as a potential topological quantum material with applications in hybrid quantum devices such as topological Josephson junctions.
